Home > Products > ESD Protection & EMI Filter > Transient Voltage Suppressors > General Purpose Protection
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UM5082 Dual Line ESD Protection Diode Array ACTIVE General Purpose Protection IEC 61000-4-2 140 5 1 6 55 2 0 3/DFN3 1.0×0.6
View All>>
Product Description
 
The UM5082 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional area junctions for conducting high transient currents, offers desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs.
The UM5082 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5082 is available in a DFN3 1.0×0.6 package with working voltages of 5 volt.
It gives designer the flexibility to protect one or two unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).
 
Features
 
- Transient Protection for Data & Power Lines to
  IEC 61000-4-2 (ESD) ±15kV(Air),
  IEC 61000-4-2 (ESD) ±8kV (Contact)
- Small Package for Use in Portable Electronics
- Suitable Replacement for MLV’s in ESD Protection Applications
- Protect One or Two I/O Lines
- Low Clamping Voltage
- Stand-Off Voltage: 5V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology
  
Applications
 
- Cell Phone Handsets and Accessories
- Microprocessor Based Equipments
- Personal Digital Assistants (PDA’s)
- Notebooks, Desktops, and Servers
- Portable Instrumentations
- Cordless Phones
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations  


                  (Top View) 
 
Electrical Characteristics
(T=25°C, Device for 5.0V Reverse Stand-Off Voltage)
 
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
7.2
V
Reverse Leakage Current
IR
VRWM=5V, T=25°C
 
 
1
μA
Clamping Voltage
VC
IPP=5A, tP=8/20μs
 
 
9.7
V
IPP=11A, tP=8/20μs
 
 
13.6
Forward Voltage
VF
IF=10mA
 
0.8
 
V
Junction Capacitance
CJ
VR=0V, f=1MHz
 
40
55
pF
Junction Capacitance
CJ
VR=2.5V, f=1MHz
 
30
40
pF
 
Ordering Information

Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UM5082
5.0V
DFN3 1.0×0.6
2
E4
10000pcs/7Inch
Tape & Reel
 
@2014 Union Semiconductor Limited. All rights Reserved.
FOLLOW US