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Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UESD55B 4-Line ESD Protection Diode Array ACTIVE General Purpose Protection IEC 61000-4-2 140 5 0.1 6 50 4 0 6/SOT563
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Product Description  

The UESD54B/55B/56B/64B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD for use in applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground. The UESD54B/55B/64B will protect up to four lines and the UESD56B will protect up to five lines.
TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high transient currents, specifically for transient suppression. It offers desirable characteristics for board level protection including fast response time, low operating, low clamping voltage, and no device degradation.
The UESD54B/55B/56B/64B may be used to meet the immunity requirements of IEC 61000-4-2, level 4. The small package makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers and digital cameras.
 
Features
 
- Transient Protection for Data & Power Lines to
  IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
- Working Voltage: 5V
- Low Leakage Current
- Low Clamping Voltage
- Solid-State Silicon Avalanche Technology
 
Applications
 
- Cellular Handsets & Accessories
- Cordless Phones
- Personal Digital Assistants (PDA’s)
- Notebooks & Handhelds
- Portable Instrumentation
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations  

 
       UESD55B
 
Electrical Characteristics

Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
7.2
V
Reverse Leakage Current
IR
VRWM=5V, T=25°C
 
 
0.1
μA
Clamping Voltage
VC
IPP=5A, tp=8/20μs
 
 
9.1
V
IPP=11A, tp=8/20μs
 
 
13
Junction Capacitance
CJ
Between I/O Pins and GND
VR=0V, f=1MHz
 
40
50
pF
Junction Capacitance
CJ
Between I/O Pins and GND
VR=2.5V, f=1MHz
 
30
40
pF
  
Ordering Information

Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UESD55B
5.0V
SC89-6/SOT563/SOT666
4
UF5
3000pcs/7Inch
Tape & Reel
  
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