Home > Products > ESD Protection & EMI Filter > Transient Voltage Suppressors > General Purpose Protection
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UESD6V8S2B 5V Dual Line ESD Protection Diode Array ACTIVE General Purpose Protection IEC 61000-4-2 140 5 0.1 6 50 2 1 3/SOT523
View All>>
Product Description
 
The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD for use in applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground, each device will protect up to two lines.
TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high transient currents, specifically for transient suppression. It offers desirable characteristics for board level protection including fast response time, low operating, low clamping voltage, and no device degradation.
The UESD6V8S2B may be used to meet the immunity requirements of IEC 61000-4-2, ±15kV air, ±8kV contact discharge and MIL-STD-883 METHOD 3015, ±8 KV HBM. The small package makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital cameras.
 
Features
 
- Transient Protection for Data & Power Lines to
  IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
  MIL-STD-883 3015 (HBM) ±8 kV
- Protect Two I/O Lines
- Working Voltage: 5V
- Low Leakage Current
- Low Operating and Clamping Voltage
- Solid-State Silicon Avalanche Technology
 
Applications
 
- Cell Phone Handsets and Accessories
- Personal Digital Assistants (PDAs)
- Notebooks, Desktops and Servers
- Portable Instrumentation
- Cordless Phones
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations  

 
 
Electrical Characteristics

Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
7.2
V
Reverse Leakage Current
IR
VRWM=5V, T=25°C
 
 
0.1
μA
Clamping Voltage
VC
IPP=5A, tP=8/20μs
 
 
9.1
V
IPP=11A, tP=8/20μs
 
 
13
Junction Capacitance
CJ
Pin 1, 2 to 3
VR=0V, f=1MHz
 
40
50
pF
Junction Capacitance
CJ
Pin 1, 2 to 3
VR=2.5V, f=1MHz
 
30
40
pF
Reverse Dynamic Resistance
Rdyn,rev
IPP=1A~5A
 
0.6
 
Ω
Forward Dynamic Resistance
Rdyn,fwd
 
0.5
 
Ω
 
Ordering Information

Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UESD6V8S2B
5.0V
SOT523
2
5ZA
3000pcs/7Inch
Tape & Reel
@2014 Union Semiconductor Limited. All rights Reserved.
FOLLOW US