UM8517P6-Small Signal and Power MOSFET-Discrete Device-Products-Union Semiconductor

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Reliability Report

	Outline-SOT363.pdf
	Land Pattern-SOT363.pdf

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Key Specifications

Part Number

Description

Status

Channel

VDS(V)

VGS(V)

RDS(ON)@4.5V(Ω)

Qg@4.5V(nC)

ID Max.(A)

PD Max.(W)

VGS(th) Min.(V)

Pin/Package

EV Kit Available?

UM8517P6

20V P-Channel Power MOSFET in SOT363 Package

ACTIVE

-20

0.11

3.3

-2.8

-0.4

3/SOT363

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Product Description

The UM8517P6 is a low threshold P-channel MOSFET, having extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The device uses a space-saving, small-outline SOT363 package.

Features

- Drain-Source Voltage (Max): -20V

- Low On-Resistance:

R_DS(ON)<130mΩ@V_GS=-4.5V, I_D= -2.8A
R_DS(ON)<150mΩ@V_GS=-2.5V, I_D= -2.0A

- Continuous Drain Current (Max): -2.8A@25°C

Applications

- Battery Packs

- Battery-Powered Portable Equipments

- Cellular and Cordless Telephones

Pin Configurations