UM5404EEDF-USB端口和以太网端口保护二极管阵列-TVS二极管阵列-分立器件-英联产品-英联

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UM5404EEDF
用于高速线路保护的4线ESD保护二极管阵列

Datasheet

Reliability Report

Package Information

	Outline-DFN6 1.6×1.6.pdf
	Land Pattern-DFN6 1.6×1.6.pdf

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Key Specifications

Part Number

Description

Status

SubFamily

Transient Standards

P (W) at 8/20 usec

VRWM MAX (V)

IR MAX at VRWM uA at 25°C

VBR MIN (V)

VPT MIN (V)

CTOT MAX (pF) L-G at VR = 0V

Lines: Uni-directional Protection

Lines: Bi-directional Protection

Pin/Package

EV Kit Available?

UM5404EEDF

用于高速线路保护的4线ESD保护二极管阵列

ACTIVE

USB and Ethernet Protection

IEC 61000-4-2 (ESD); IEC 61000-4-4 (EFT); IEC 61000-4-5 (Lighting)

200

6/DFN 1.6×1.6

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Product Description

UM5404EEDF is surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from over-voltage caused by ESD (electrostatic discharge), electrical fast transients (EFT) and lighting.

The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient to either the positive side of the power supply line or to ground. The internal TVS diode prevents over-voltage on the power line, protecting any downstream components.

UM5404EEDF has a low typical capacitance of 1pF and operates with virtually no insertion loss to 2GHz. This makes the device ideal for protection of high-speed data line such as USB2.0, Firewire, DVI and gigabit Ethernet interface.

The low capacitance array configuration allows the user to protect four high-speed data or transmission lines. The low inductance construction minimizes voltage overshoot during high current surges. This device is optimized for ESD protection of portable electronics. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).

Features

- Transient Protection for High-Speed Data Lines to

IEC 61000-4-2 (ESD) ±20kV (Air), ±12kV (Contact)

IEC 61000-4-4 (EFT) 40A (5/50ns)

IEC 61000-4-5 (Lighting) 10A (8/20µs)

- Array of Surge Rated Diodes with Internal TVS Diode

- Protects up to Four I/O Lines & Power Line

- Low Capacitance (<1pF) for High-Speed Interfaces, No Insertion Loss to 2.0GHz

- Low Leakage Current and Clamping Voltage

- Low Operating Voltage: 5.0V

Applications

- USB 2.0

- USB OTG

- 10/100/1000Mbit Ethernet

- Monitors and Flat Panel Displays

- Digital Visual Interface (DVI)

- High-Definition Multimedia Interface (HDMI)

- SIM Ports

- IEEE 1394 Firewire Ports

Pin Configurations

(Top View)

Circuit Diagram

Electrical Characteristics (Note 1)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Reverse Stand-Off Voltage	V_RWM	VCC to GND			5.0	V
Reverse Breakdown Voltage	V_BR	I_T=1mA, VCC to GND	6.0			V
Reverse Leakage Current	I_R	V_RWM=5V, VCC to GND			2	µA
Clamping Voltage	V_C	I_PP=1A, 8/20µs Any I/O Pin to GND		8	10	V
Clamping Voltage	V_C	I_PP=5A, 8/20µs Any I/O Pin to GND		12	15	V
Junction Capacitance	C_j	V_R=0V, f=1MHz Any I/O Pin to GND			2	pF
		V_R=0V, f=1MHz , Between I/O Pins			1	pF
		V_R=0V, f=1MHz VCC to GND		60		pF
		V_R=2.5V, f=1MHz VCC to GND		40		pF
Reverse Recovery Time	Trr	Any I/O Pin to VCC		130		ns
		GND to VCC		300		ns
		GND to any I/O Pin		400		ns