首页 > 英联产品 > 分立器件 > TVS二极管阵列 > 一般功能保护二极管阵列
UM5059
5V单线ESD保护二极管阵列
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UM5059 5V单线ESD保护二极管阵列 ACTIVE General Purpose Protection IEC 61000-4-2 140 5 0.1 6 55 1 0 2/DFN 1.0×0.6
View All>>
Product Description
 
The UM5059 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The UM5059 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5059 is available in DFN2 1.0×0.6 (compatible with SOD923 & SOD882) package with working voltages of 5 volt. It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, ±30kV air, ±30kV contact discharge.
 
Features
 
- Transient Protection for Data Lines to
  IEC 61000-4-2 (ESD) ±30kV (Air), ±30kV (Contact)
- Small Package for Use in Portable Electronics
- Suitable Replacement for MLV’s in ESD Protection Applications
- Protect One I/O or Power Line
- Low Clamping Voltage
- Stand Off Voltage: 5V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology
- Small Body Outline Dimensions: 1.0mm×0.6mm
 
Applications
 
- Cell Phone Handsets and Accessories
- Personal Digital Assistants (PDAs)
- Notebooks, Desktops and Servers
- Portable Instrumentation
- Cordless Phones
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations 


 
Electrical Characteristics
(T=25°C, Device for 5.0V Reverse Stand-off Voltage)
 
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
7.8
V
Reverse Leakage Current
IR
VRWM=5V, T=25°C
 
 
0.1
μA
Clamping Voltage
VC
IPP=5A, tp=8/20μS
 
 
9.1
V
IPP=11A, tp=8/20μS
 
 
13
Forward Voltage
VF
IF=10mA
 
0.8
 
V
Junction Capacitance
CJ
VR=0V, f=1MHz
 
40
55
pF
Junction Capacitance
CJ
VR=2.5V, f=1MHz
 
30
40
pF
 
Ordering Information 

Part Number  
WorkingVoltage
Packaging Type
Channel
Marking Code
Shipping Qty
UM5059
5.0V
DFN2 1.0×0.6
1
E9
5000pcs/7Inch
Tape & Reel
Application Notes
微处理器超长启动周期中的外部看门狗管理方案v2.pdf
利用3.3V供电RS485接口实现远距离数据通信.pdf
高速低电源电压逻辑电平转换电路.pdf
超低功耗LDO线性稳压器.pdf
I2C-BUS电平转换芯片在安防产品的应用.pdf
0201超小封装ESD保护器件.pdf
Analog Switch Permits Port Sharing in Portable Equipment.pdf
Balanced Modulator Demodulator Employing UM4684.pdf
Level Shifter for High Speed and Wide Voltage Range Interface.pdf
Low Resistance Analog Switches Permit Speaker Switching in Audio Devices.pdf
Low-Icct Analog Switches for Ultra-Portable Designs.pdf
Selecting the Right CMOS Analog Switch.pdf
Product Selection Guide
ESD Protection and EMI Filters Selection Guide.pdf
Product Search
Parametric Search
Product You Recently Viewed
@2014 Union Semiconductor Limited. All rights Reserved.
FOLLOW US