UM8120DA-小信号和功率MOSFET-分立器件-英联产品-英联

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UM8120DA
20V N沟道功率MOSFET,采用DFN3 1.0×0.6封装

Datasheet

Reliability Report

Package Information

	Outline-DFN3 1.0×0.6.pdf
	Land Pattern-DFN3 1.0×0.6.pdf

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Key Specifications

Part Number

Description

Status

Channel

VDS(V)

VGS(V)

RDS(ON)@4.5V(Ω)

Qg@4.5V(nC)

ID Max.(A)

PD Max.(W)

VGS(th) Min.(V)

Pin/Package

EV Kit Available?

UM8120DA

20V N沟道功率MOSFET,采用DFN3 1.0×0.6封装

ACTIVE

0.16

0.6

0.23

0.5

3/DFN 1.0×0.6

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Product Description

The UM8120DA is a low threshold N-channel MOSFET with extremely low on-resistance. This benefit provides the designer with an excellent efficient device for use in battery and load management applications. The device is available in a space-saving, small-outline DFN3 1.0×0.6 package.

Features

- Drain-Source Voltage (Max): 20V

- Low On-Resistance:

160mΩ@V_GS=4.5V, I_D=0.6A

210mΩ@V_GS=2.5V, I_D=0.3A
270mΩ@V_GS=1.8V, I_D=0.2A

- Continuous Drain Current (Max):

0.6A@25°C

Applications

-Load Switch

-Battery Packs

-Battery-Powered Portable Equipments

-Cellular and Cordless Telephones