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首页 > 英联产品 > 分立器件 > TVS二极管阵列 > 一般功能保护二极管阵列 |
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Key Specifications
Product Description
The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD for use in applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground, each device will protect up to two lines.
TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high transient currents, specifically for transient suppression. It offers desirable characteristics for board level protection including fast response time, low operating, low clamping voltage, and no device degradation.
The UESD6V8S2B may be used to meet the immunity requirements of IEC 61000-4-2, ±15kV air, ±8kV contact discharge and MIL-STD-883 METHOD 3015, ±8 KV HBM. The small package makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital cameras.
Features
- Transient Protection for Data & Power Lines to
IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
MIL-STD-883 3015 (HBM) ±8 kV
- Protect Two I/O Lines
- Working Voltage: 5V
- Low Leakage Current
- Low Operating and Clamping Voltage
- Solid-State Silicon Avalanche Technology
Applications
- Cell Phone Handsets and Accessories
- Personal Digital Assistants (PDAs)
- Notebooks, Desktops and Servers
- Portable Instrumentation
- Cordless Phones
- Digital Cameras
- Peripherals
- MP3 Players
Pin Configurations
 Electrical Characteristics
Ordering Information
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Application Notes
Product Selection Guide
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