UM2362P-小信号和功率MOSFET-分立器件-英联产品-英联

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UM2362P
采用SOT323封装的60V N沟道小信号MOSFET

Datasheet

Reliability Report

Package Information

	Outline-SOT323.pdf
	Land Pattern-SOT323.pdf

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Key Specifications

Part Number

Description

Status

Channel

VDS(V)

VGS(V)

RDS(ON)@4.5V(Ω)

Qg@4.5V(nC)

ID Max.(A)

PD Max.(W)

VGS(th) Min.(V)

Pin/Package

EV Kit Available?

UM2362P

采用SOT323封装的60V N沟道小信号MOSFET

ACTIVE

1.7@5V

0.115

0.2

3/SOT323

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Product Description

The UM2362 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-3 or SOT323 package.

Features

- Drain-Source Voltage (Max): 60V

- Low On-Resistance (Typ):

1.2Ω@V_GS=10V;

1.7Ω@V_GS=5V

- Continuous Drain Current (Max): 115mA@25°C

Applications

- Battery Packs

- Battery-Powered Portable Equipment

- Cellular and Cordless Telephones

Pin Configurations