UM2302P-Small Signal and Power MOSFET-Discrete Device-Products-Union Semiconductor

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Reliability Report

	Outline-SOT323.pdf
	Land Pattern-SOT323.pdf

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Key Specifications

Part Number

Description

Status

Channel

VDS(V)

VGS(V)

RDS(ON)@4.5V(Ω)

Qg@4.5V(nC)

ID Max.(A)

PD Max.(W)

VGS(th) Min.(V)

Pin/Package

EV Kit Available?

UM2302P

20V N-Channel Power MOSFET Plus Integrated Diode in SOT323 Package

ACTIVE

0.09

1.6

0.5

0.4

3/SOT323

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Product Description

The UM2302 is a low threshold N-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The device uses a space-saving, small-outline SOT23-3 or SOT323 package.

Features

- Drain-Source Voltage (Max): 20V

- Low On-Resistance:

90mΩ@V_GS=4.5V

150mΩ@V_GS=2.5V

- Continuous Drain Current (Max):

2A@25°C (SOT23-3)

1.6A@25°C (SOT323)

Applications

- Battery Packs

- Battery-Powered Portable Equipments

- Cellular and Cordless Telephones