Key Specifications

The UESD6V8L1F ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. 

The UESD6V8L1F ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UESD6V8L1F is available in a DFN2 1.0×0.6 (Compatible with SOD882) package with working voltages of 5 volt. 

It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).

UESD6V8L1F is fabricated using dual diffusion technology offer low junction capacitance (20pF), which is required in high speed signal protection application.

 

- Transient Protection for Data Lines to

  IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)

- Small Package for Use in Portable Electronics

- Suitable Replacement for MLV’s in ESD Protection Applications

- Protect One I/O or Power Line

- Low Clamping Voltage

- Stand-off Voltages: 5V

- Low Leakage Current

- Solid-State Silicon-Avalanche Technology

- Small Body Outline Dimensions: 1.0mm×0.6mm

 

- Cell Phone Handsets and Accessories

- Personal Digital Assistants (PDA’s)

- Notebooks, Desktops and Servers

- Portable Instrumentation

- Cordless Phones

- Digital Cameras

- Peripherals

- MP3 Players

 
 

(T=25°C, Device for 5.0V Reverse Stand-off Voltage)
 

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Reverse Stand-Off Voltage	VRWM				5	V
Reverse Breakdown Voltage	VBR	IT=1mA	6	6.8	7.2	V
Reverse Leakage Current	IR	VRWM=5V, T=25°C			0.1	μA
Clamping Voltage	VC	IPP=1A, tP=8/20μs			7	V
		IPP=2A, tP=8/20μs			8
		IPP=5A, tP=8/20μs			10.8
Forward Voltage	VF	IF=10mA		0.8		V
Junction Capacitance	CJ	VR=0V, f=1MHz		17	20	pF
Junction Capacitance	CJ	VR=2.5V, f=1MHz		8	10	pF

  

Part Number	Working Voltage	Packaging Type	Channel	Marking Code	Shipping Qty
UESD6V8L1F	5.0V	DFN2 1.0×0.6	1	E2	5000pcs/7Inch Tape & Reel